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IRF610 Datasheet, PDF (4/7 Pages) Intersil Corporation – 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
IRF610
Typical Performance Curves Unless Otherwise Specified (Continued)
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
TJ = 150oC SINGLE PULSE
TC = 25oC
10µs
100µs
1ms
1
10ms
0.1
1
DC
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
5
VGS = 10V
VGS = 8V
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
VGS = 7V
2
VGS = 6V
1
VGS = 5V
0
VGS = 4V
0
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
3
2
VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
1
VGS = 4V VGS = 5V
0
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
1
0.1
TJ = 150oC
TJ = 25oC
10-2
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
9
6
VGS = 10V
3
VGS = 20V
0
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-193
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 3.2A
2.4
1.8
1.2
0.6
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE