HCS10MS Datasheet, PDF (5/8 Pages) Intersil Corporation – Radiation Hardened Triple 3-Input NAND Gate

Specifications HCS10MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
6, 8, 12
1, 2, 3, 4, 5, 7, 9, 10, 11,
-
13
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
6, 8, 12
7
-
1, 2, 3, 4, 5, 9, 10,
-
-
11, 13, 14
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
7
6, 8, 12
14
1, 2, 3, 4, 5, 9,
-
10, 11, 13
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
6, 8, 12
7
1, 2, 3, 4, 5, 9, 10, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518747
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