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CD4085BMS Datasheet, PDF (5/9 Pages) Intersil Corporation – CMOS Dual 2 Wide 2 Input AND-OR-INVERT Gate
Specifications CD4085BMS
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER
SYMBOL
DELTA LIMIT
Output Current (Source)
IOH5A
± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
TEST
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
READ AND RECORD
PRE-IRRAD
POST-IRRAD
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
Static Burn-In 1
Note 1
OPEN
3, 4
GROUND
1, 2, 5-13
VDD
14
9V ± -0.5V
50kHz
25kHz
Static Burn-In 2
3, 4
Note 1
7
1, 2, 5, 6, 8-14
Dynamic Burn-
-
In Note 1
7
14
3, 4
1, 2, 5, 6, 8, 9,
10, 11
12, 13
Irradiation
3, 4
Note 2
7
1, 2, 5, 6, 8-14
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
7-1050