RFW2N06RLE Datasheet, PDF (4/5 Pages) Intersil Corporation – 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

RFW2N06RLE
Typical Performance Curves Unless Otherwise Specified (Continued)
1.50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I_D = 2A
1.25
1.00
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 ^{VGS = 5V, ID = 2A}
1.5
1.0
0.75
0.5
0.50
4.0
4.5
5.0
5.5
6.0
6.5
7.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON VOLTAGE
vs GATE VOLTAGE
0
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.50
V_GS = V_DS, I_D = 250µA
1.25
1.00
0.75
0.50
0.25
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1500
1200
900
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GS
600
C_ISS
300
0
0
C_OSS
C_RSS
5
10
15
20
25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
1.50
I_D = 250µA
1.25
1.00
0.75
0.50
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
60
10
R_L = 30Ω
I_G(REF) = 0.5mA
V_GS = 5V
45
0.75 BV_DSS
0.50 BV_DSS
30
0.25 BV_DSS
5
V_DD = BV_DSS
GATE
SOURCE
VOLTAGE
15
0.75 BV_DSS
0.50 BV_DSS
0.25 BV_DSS
V_DD = BV_DSS
DRAIN SOURCE VOLTAGE
0
0
20
I_G(REF)
I_G(ACT)
t, TIME (µs)
80
I_G(REF)
I_G(ACT)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
6-286