RFW2N06RLE Datasheet, PDF (1/5 Pages) Intersil Corporation – 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

Data Sheet
RFW2N06RLE
July 1999 File Number 2838.3
2A, 60V, 0.160 Ohm, Logic Level,
N-Channel Power MOSFET
The RFW2N06RLE N-Channel, logic level, ESD protected,
power MOSFET is manufactured using the MegaFET
process. This process, which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
The RFW2N06RLE was designed for use with logic level
(5V) driving sources in applications such as programmable
controllers, automotive switching, switching regulators,
switching converters, motor and relay drivers and emitter
switches for bipolar transistors. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to
5V range, thereby facilitating true on-off power control
directly from logic circuit supply voltages.
Formerly developmental type TA9861.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFW2N06RLE
HEXDIP
RFW2N06RLE
NOTE: When ordering, use the entire part number.
Features
• 2A, 60V
• r_DS(on) = 0.160Ω
• UIS Rating Curve (Single Pulse)
• Design Optimized For 5 Volt Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL
Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Electrostatic Discharge Protected
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
4 PIN HEXDIP
GATE
DRAIN
SOURCE
6-283
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999