RFW2N06RLE Datasheet, PDF (2/5 Pages) Intersil Corporation – 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

RFW2N06RLE
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFW2N06RLE
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
60
2
14
-5 to 10
1.09
0.009
V
V
A
A
V
W
W/^oC
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Refer to UIS Curve
Electrostatic Discharge Rating, MIL-STD-883, Catagory B(2). . . . . . . . . . . . . . . . . . . . . . . .ESD
2
KV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 150
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
o_C
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_(ON)
t_d(ON)
t_r
t_d(OFF)
t_f
t_(OFF)
Q_g(TOT)
Q_g(5)
Q_g(TH)
I_D =250µA, V_GS = 0V
V_GS = V_DS, I_D = 250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS
T_C =
= 0.8 x
125^oC
Rated
BV_DSS,
V_GS
=
0V
V_GS =-5V to 10V
I_D = 2A, V_GS = 5V (Figure 8)
I_D = 2A, V_GS = 4.3V (Figure 8)
V_DD = 30V, I_D = 2A, R_L = 15Ω, V_GS = 5V,
R_G = 25Ω (Figures 12, 13, 14)
V_GS = 0 to 10V
V_GS = 0 to 5V
V_GS = 0 to 1V
V_DD = 48V, I_D = 2A,
I_G(REF) =0.5mA,
R_L = 24Ω
(Figures 12, 15, 16)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Ambient
C_ISS
C_OSS
C_RSS
R_θJA
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 11)
MIN TYP MAX UNITS
60
-
-
V
1
-
2
V
-
-
1
µA
-
-
25
µA
-
- ±100 nA
-
-
160 mΩ
-
-
200 mΩ
-
-
100
ns
-
13
-
ns
-
42
-
ns
-
95
-
ns
-
45
-
ns
-
200
ns
-
20
30
nC
-
11
16
nC
-
0.6 1.0
nC
-
535
-
pF
-
175
-
pF
-
32
-
pF
-
-
115 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
NOTES:
V_SD
t_rr
I_SD = 2A
I_SD = 2A, dl_SD/dt = 100A/µs
2. Pulse test: width ≤ 300µs duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.2
V
-
-
200
ns
6-284