RFL1N18 Datasheet, PDF (4/5 Pages) Intersil Corporation – 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

RFL1N18, RFL1N20
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
V_GS = 10V, I_D = 1A
1.5
1.4
V_GS = V_DS, I_D = 250µA
1.2
1.0
1.0
0.5
0.8
0
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE
vs JUNCTION TEMPERATURE
0.6
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION
TEMPERATURE
220
f = 1MHz
180
140
C_ISS
100
60
20
0
C_OSS
C_RSS
10
20
30
40
50
60
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
1000
900
800
V_DS = 15V
250µs PULSE TEST
DUTY CYCLE ≤ 2%
T_C = -40^oC
700
600
T_C = 25^oC
500
T_C = 125^oC
400
300
200
100
0
0
0.5
1
1.5
2
2.5
I_D, DRAIN CURRENT (A)
FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT
200
10
BV_DSS
V_DD = V_DSS
V_DD = V_DSS
GATE
150
TO
SOURCE
8
VOLTAGE
0.75V_DSS
6
100
0.50V_DSS
0.25V_DSS
4
R_L = 100Ω
50
I_G(REF) = 0.09mA
V_GS = 10V
2
DRAIN TO SOURCE
VOLTAGE
0
I_G(REF)
20
I_G(ACT)
t, TIME (µs)
0
I_G(REF)
80
I_G(ACT)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
5-4