RFL1N18 Datasheet, PDF (3/5 Pages) Intersil Corporation – 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

RFL1N18, RFL1N20
Typical Performance Curves Unless Otherwise Specified
1.2
1.4
1.0
1.2
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10.00
1.00
T_C = 25^oC
T_J = MAX RATED
0.10
OPERATION IN THIS
AREA LIMITED BY r_DS(ON)
0.01
1
RFL1N18
RFL1N20
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
3.0
250µs PULSE TEST
2.5
DUTY CYCLE ≤ 20%
T_C = 25^oC
2.0
V_GS = 20V
V_GS = 10V
V_GS = 8V
1.5
1.0
0.5
0
0
V_GS = 7V
V_GS = 6V
V_GS = 5V
V_GS = 4V
1
2
3
4
5
6
7
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
3.0
V_DS = 15V
250µs PULSE TEST
2.5 _{DUTY CYCLE ≤ 2%}
T_C = 25^oC
2.0
T_C = -40^oC
1.5
T_C = 125^oC
1.0
0.5
0
0
T_C = 125^oC
T_C = -40^oC
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERSTICS
6
V_GS = 10V
250µs PULSE TEST
5 _{DUTY CYCLE ≤ 2%}
4
3
2
T_C = 125^oC
T_C = 25^oC
T_C = -40^oC
1
0
12
0
0.5
1.0
1.5
2.0
2.5
3.0
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5-3