RFL1N18 Datasheet, PDF (1/5 Pages) Intersil Corporation – 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Semiconductor
January 1998
Features
• 1A, 180V and 200V
• r_DS(ON) = 3.65Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N18
TO-205AF
RFL1N18
RFL1N20
TO-205AF
RFL1N20
NOTE: When ordering, use the entire part number.
RFL1N18,
RFL1N20
1A, 180V and 200V, 3.65 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09289.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1442.2