RFL1N12 Datasheet, PDF (4/5 Pages) Intersil Corporation – 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

RFL1N12, RFL1N15
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
V_GS = 10V, I_D = 1A
1.5
1.4
V_GS = V_DS, I_D = 250µA
1.2
1.0
1.0
0.5
0.8
0
-50
0
50
100
150
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0
-50
0
50
100
150
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION
TEMPERATURE
240
f = 1MHz
200
160
120
C_ISS
80
C_OSS
40
C_RSS
0
0
10
20
30
40
50
60
70
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
1200
V_DS = 10V
1000 ^{80µs PULSE TEST}
800
600
400
T_C = -40^oC
T_C = 25^oC
T_C = 125^oC
200
0
0
0.5
1.0
1.5
2.0
2.5
3.0
I_D, DRAIN CURRENT (A)
FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT
150
10
BV_DSS
V_DD = V_DSS
GATE
V_DD = V_DSS
TO
8
112.5
SOURCE
VOLTAGE
R_L = 75Ω
I_G(REF) = 0.095mA
6
75
V_GS = 10V
0.75V_DSS
4
0.50V_DSS
37.5
0.25V_DSS
2
DRAIN TO SOURCE
VOLTAGE
0
I_G(REF)
20
I_G(ACT)
0
t, TIME (µs)
I_G(REF)
80
I_G(ACT)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
5-4