RFL1N12 Datasheet, PDF (2/5 Pages) Intersil Corporation – 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

RFL1N12, RFL1N15
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFL1N12
120
120
1
5
±20
8.33
0.0667
-55 to 150
300
260
RFL1N15
150
150
1
5
±20
8.33
0.0667
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFL1N12
BV_DSS I_D = 250µA, V_GS = 0V
120 -
-
V
RFL1N15
150 -
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V_GS(TH) V_GS = V_DS, I_D = 250µA, (Figure 8)
2
I_DSS V_DS = 0.8 x Rated BV_DSS, T_C = 25^oC
-
T_C = 125^oC
-
I_GSS V_GS = ±20V, V_DS = 0V
-
V_DS(ON) I_D =1A, V_GS =10V
-
I_D = 2A, V_GS = 10V
-
r_DS(ON) I_D = 1A, V_GS = 10V, (Figures 6, 7)
-
g_fs
I_D = 1A, V_DS = 10V, (Figure 10)
400
t_d(ON) I_D ≈ 1A, V_DD = 75V, R_GS = 50Ω
-
t_r
V_GS = 10V, (Figures 11, 12, 13)
-
t_d(OFF)
-
t_f
-
C_ISS V_GS = 0V, V_DS = 25V, f = 1MHz, (Figure 9)
-
C_OSS
-
C_RSS
-
R_θJC
-
-
4
V
-
1
µA
-
25
µA
- ±100 nA
-
1.9
V
-
6.3
V
-
1.9
Ω
-
-
S
17
25
ns
30
45
ns
30
45
ns
30
50
ns
- 200 pF
-
80
pF
-
25
pF
-
15 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 1A
Reverse Recovery Time
t_rr
I_SD = 1A, dI_SD/dt = 50A/µs
NOTE:
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
MIN TYP MAX UNITS
-
-
1.4
V
- 150 -
ns
5-2