RFL1N12 Datasheet, PDF (3/5 Pages) Intersil Corporation – 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

RFL1N12, RFL1N15
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1.5
1.0
0.5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10.00
OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
1.00
0.10
RFL1N12 RFL1N15
0.01
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
4.0
3.5 ^{250µA PULSE TEST}
3.0
V_GS = 10V
2.5
V_GS = 20V
V_GS = 8V
2.0
V_GS = 7V
1.5
V_GS = 6V
1
V_GS = 5V
0.5
V_GS = 4V
0
0 1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
3.0
2.5
T_C = 25^oC
2.0
T_C = -40^oC
1.5
V_DS = 12V
250µA PULSE TEST
DUTY CYCLE 2%
T_C = 125^oC
1.0
0.5 _{TC = 125oC}
T_C = -40^oC
0
0
2
4
6
8
10
12
14
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
6
250µA PULSE TEST
DUTY CYCLE 2%
5
4
T_C = 125^oC
3
T_C = 25^oC
2
T_C = -40^oC
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5-3