RFG70N06 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

RFG70N06, RFP70N06, RF1S70N06SM
Typical Performance Curves Unless Otherwise Specified (Continued)
300
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R) ln [(I_AS*R)/(1.3*RATED BV_DSS-V_DD) +1]
100
STARTING T_J = 25^oC
STARTING T_J = 150^oC
10
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
200
160
120
80
40
0
0
V_GS = 20V V_GS = 10V
V_GS = 8V
V_GS = 7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
V_GS = 6V
V_GS = 5V
V_GS = 4.5V
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
160 ^{VDD = 15V}
-55^oC
120
25^oC
175^oC
2.5
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
2 ^{VGS = 10V, ID = 70A}
1.5
80
1
40
0.5
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V_GS = V_DS, I_D = 250µA
1.5
2.0
I_D = 250µA
1.5
1.0
1.0
0.5
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-477