RFG70N06 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

RFG70N06, RFP70N06, RF1S70N06SM
Data Sheet
July 1999 File Number 3206.5
70A, 60V, 0.014 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49007.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG70N06
TO-247
RFG70N06
RFP70N06
TO-220AB
RFP70N06
RF1S70N06SM
TO-263AB
F1S70N06
NOTE: When ordering use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 70A, 60V
• r_DS(on) = 0.014Ω
• Temperature Compensated PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175^oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-474
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
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