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RFG70N06 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs | |||
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RFG70N06, RFP70N06, RF1S70N06SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
RFG70N06, RFP70N06
RF1S70N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kâ¦) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
60
60
70
Refer to Peak Current Curve
±20
Refer to UIS Curve
150
1.0
-55 to 175
300
260
V
V
A
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
Qg(TOT)
Qg(10)
Qg(TH)
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = 60V, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID = 70A, VGS = 10V (Figure 9)
VDD = 30V, ID â 70A, RL = 0.43â¦,
VGS = 10V, RGS = 2.5â¦
(Figure 13)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 48V, ID = 70A,
RL = 0.68â¦
Ig(REF) = 2.2mA
(Figure 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
TO-220 and TO-263
TO-247
MIN TYP MAX UNITS
60
-
-
V
2
-
4
V
-
-
1
µA
-
-
25
µA
-
- ±100 nA
-
- 0.014 â¦
-
- 125 ns
-
12
-
ns
-
50
-
ns
-
40
-
ns
-
15
-
ns
-
- 125 ns
- 185 215 nC
- 100 115 nC
-
5.5 6.5
nC
- 3000 -
pF
- 900 -
pF
- 300 -
pF
-
-
1.0 oC/W
-
-
62 oC/W
-
-
30 oC/W
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
VSD
ISD = 70A
-
1.5
V
Reverse Recovery Time
trr
ISD = 70A, dISD/dt = 100A/µs
- 125 ns
NOTES:
2. Pulse test: pulse width ⤠300ms, duty cycle ⤠2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-475
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