RFF60P06 Datasheet, PDF (4/8 Pages) Intersil Corporation – 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET

RFF60P06
Typical Performance Curves Unless Otherwise Specified (Continued)
-200
-100
-75
If R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R) ln [(I_AS*R) / (1.3 RATED BV_DSS - V_DD) + 1]
STARTING T_J = 25^oC
STARTING T_J = 150^oC
-10
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
-150
-125
-100
V_DD = -15V
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-55^oC
25^oC
150^oC
-75
-50
-25
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
-150
-125
V_GS = -10V
V_GS = -20V
-100
-75
V_GS = -8V
V_GS = -7V
PULSE DURATION = 250µs
T_C = 25^oC
V_GS = -6V
-50
V_GS = -4.5V
V_GS = -5V
-25
0
0
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
2.5
PULSE DURATION = 250µs, V_GS = -10V, I_D = 25A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V_GS = V_DS, I_D = 250µA
1.5
1.0
0.5
0
-80
-40
0
40
80
120 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4-184
2.0
I_D = 250µA
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE