RFF60P06 Datasheet, PDF (2/8 Pages) Intersil Corporation – 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET

RFF60P06
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Derate Above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
RFF60P06
-60
-60
±20
25 (Note 5)
Refer to Peak Current Curve
Refer to UIS Curve
125
1.0
-55 to 150
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
BV_DSS I_D = 250µA, V_GS = 0V
-60 -
-
V
V_GS(TH) V_GS = V_DS, I_D = 250µA
-2.0 -3.0 -4.5
V
I_DSS V_DS = Rated BV_DSS,V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC -
I_GSS V_GS = ±20V, T_C = 125^oC
-
-
-25
µA
- -250 µA
- ±100 µA
r_DS(ON) I_D = 25A, V_GS = -10V, (Figure 9)
-
- 0.030 Ω
t_ON
t_d(ON)
t_r
V_DD = -30V, I_D = 25A, R_L = 1.2Ω, V_GS = -10V
R_G = 2.35Ω
(Figures 13, 16, 17)
-
-
195
ns
-
25 70
ns
-
50 125
ns
t_d(OFF)
-
80 200
ns
t_f
-
30 75
ns
t_OFF
-
-
275
ns
Q_g(TOT)
Q_g(-10)
Q_g(TH)
V_GS = 0 to -20V
V_GS = 0 to -10V
V_GS = 0 to -2V
V_DD = -30V, I_D = 25A,
R_L = 1.2Ω
I_G(REF) = -4.2mA
(Figures 18, 19)
-
-
450 nC
-
-
225 nC
-
-
15
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
V_DS = -25V, V_GS = 0V
f = 1MHz
- 7200 -
pF
- 1800 -
pF
- 400
-
pF
-
-
1.0 ^oC/W
-
-
48 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = -25A
-
-1.1 -1.5
Diode Reverse Recovery Time
t_rr
I_SD = -25A, dI_SD/dt = -100A/µs
-
130
200
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
4. Current is limited by package capability.
UNITS
V
ns
4-182