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RFF60P06 Datasheet, PDF (2/8 Pages) Intersil Corporation – 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET | |||
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RFF60P06
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kâ¦) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
RFF60P06
-60
-60
±20
25 (Note 5)
Refer to Peak Current Curve
Refer to UIS Curve
125
1.0
-55 to 150
260
UNITS
V
V
V
A
W
W/oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
BVDSS ID = 250µA, VGS = 0V
-60 -
-
V
VGS(TH) VGS = VDS, ID = 250µA
-2.0 -3.0 -4.5
V
IDSS VDS = Rated BVDSS,VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC -
IGSS VGS = ±20V, TC = 125oC
-
-
-25
µA
- -250 µA
- ±100 µA
rDS(ON) ID = 25A, VGS = -10V, (Figure 9)
-
- 0.030 â¦
tON
td(ON)
tr
VDD = -30V, ID = 25A, RL = 1.2â¦, VGS = -10V
RG = 2.35â¦
(Figures 13, 16, 17)
-
-
195
ns
-
25 70
ns
-
50 125
ns
td(OFF)
-
80 200
ns
tf
-
30 75
ns
tOFF
-
-
275
ns
Qg(TOT)
Qg(-10)
Qg(TH)
VGS = 0 to -20V
VGS = 0 to -10V
VGS = 0 to -2V
VDD = -30V, ID = 25A,
RL = 1.2â¦
IG(REF) = -4.2mA
(Figures 18, 19)
-
-
450 nC
-
-
225 nC
-
-
15
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = -25V, VGS = 0V
f = 1MHz
- 7200 -
pF
- 1800 -
pF
- 400
-
pF
-
-
1.0 oC/W
-
-
48 oC/W
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -25A
-
-1.1 -1.5
Diode Reverse Recovery Time
trr
ISD = -25A, dISD/dt = -100A/µs
-
130
200
NOTES:
2. Pulse test: pulse width ⤠300µs, duty cycle ⤠2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
4. Current is limited by package capability.
UNITS
V
ns
4-182
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