RFF60P06 Datasheet, PDF (1/8 Pages) Intersil Corporation – 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET

Data Sheet
RFF60P06
September 1998 File Number 3975.2
25A†, 60V, 0.030 Ohm, P-Channel Power
MOSFET
The RFF60P06 P-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Intersil
Corporation High-Reliability Marketing group for any desired
deviations from the data sheet.
Formerly developmental type TA09835.
Commercial Version: RFG60P06E.
† Current is limited by the package capability.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFF60P06
TO-254AA
RFF60P06
NOTE: When ordering, use the entire part number.
Features
• 25A, 60V
• r_DS(ON) = 0.030Ω
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150^oC Operating Temperature
• Reliability Screened
Symbol
D
G
S
Packaging
JEDEC TO-254AA
PACKAGE TAB
(ISOLATED)
GATE
SOURCE
DRAIN
CAUTION: Berylia Warning per MIL-S-19500.
Refer to package specifications.
4-181
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.