RFD3N08L Datasheet, PDF (4/8 Pages) Intersil Corporation – 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

RFD3N08L, RFD3N08LSM
Typical Performance Curves Unless Otherwise Specified (Continued)
20 _{If R = 0}
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
10 If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
STARTING T_J = 25^oC
STARTING T_J = 150^oC
10
V_GS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
T_C = 25^oC
6
V_GS = 5V
4
V_GS = 4.5V
V_GS = 4V
2
V_GS = 3.5V
1
0.001
0.01
0.1
1
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
V_GS = 3V
0
0
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8 ^{VDD = 15V}
6
4
2
-55^oC
25^oC
175^oC
0
0
1.5
3
4.5
6
7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
2.5
I_D = 4A
2
I_D = 3A
1.5
I_D = 1.5A
1
0.5
0
2
I_D = 0.75A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DD = 15V
2.5
3
3.5
4
4.5
5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5 V_GS = 5V, I_D = 3A
2
1.5
1
0.5
0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2
V_GS = V_DS, I_D = 250µA
1.5
1
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
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