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RFD3N08L Datasheet, PDF (1/8 Pages) Intersil Corporation – 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs | |||
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Data Sheet
RFD3N08L, RFD3N08LSM
July 1999 File Number 2836.4
3A, 80V, 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFD3N08L and RFD3N08LSM are N-Channel
enhancement mode silicon gate power ï¬eld effect transistors
speciï¬cally designed for use with logic level (5V) driving
sources in applications such as programmable controllers,
automotive switching, and solenoid drivers. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09922.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD3N08L
TO-251AA
F3N08L
RFD3N08LSM
TO-252AA
F3N08L
NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD3N08LSM9A
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
⢠3A, 80V
⢠rDS(ON) = 0.800â¦
⢠Temperature Compensating PSPICE® Model
⢠On Resistance vs Gate Drive Voltage Curves
⢠Peak Current vs Pulse Width Curve
⢠UIS Rating Curve
⢠175oC Operating Temperature
⢠Related Literature
- TB334 âGuidelines for Soldering Surface Mount
Components to PC Boardsâ
Symbol
D
G
S
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
6-26
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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