RFD3N08L Datasheet, PDF (2/8 Pages) Intersil Corporation – 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

RFD3N08L, RFD3N08LSM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFD3N08L,
RFD3N08LSM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Figures 3, 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Maximum Power Dissipation
Derate Above 25^oC . . . . .
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.P_D
...
80
80
±10
3
Refer to Peak Current Curve
30
0.2
V
V
V
A
W
W/^oC
Pulsed Avalanche Energy Rating (Figure 6) (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
Refer to UIS Curve
-55 to 175
o_C
300
o_C
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
BV_DSS
V_GS(TH)
I_DSS
I_D = 250µA, V_GS = 0V (Figure 12)
V_GS = V_DS, I_D = 250µA (Figure 11)
V_DS = Rated BV_DSS, V_GS = 0V
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
I_GSS
r_DS(ON)
V_DS
V_GS
=
=
0.8
0V
x Rated
125^oC
BV_DSS,
V_GS = ±10V
I_D = 3A, V_GS = 5V, (Figures 9, 10)
Turn-On Time
Turn-On Delay Time
Rise Time
t_(ON)
t_d(ON)
t_r
V_DD = 40V, I_D = 3A,
R_L = 13.3Ω, V_GS = 5V,
R_G = 25Ω,
(Figures 13, 15, 18, 19)
Turn-Off Delay Time
Fall Time
Turn-Off Time
t_d(OFF)
t_f
t_(OFF)
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Q_g(TOT)
Q_g(5)
Q_g(TH)
V_GS = 0V to 10V
V_GS = 0V to 5V
V_GS = 0V to 1V
V_DD = 64V, I_D = 3A,
I_g(REF) = 0.1mA
R_L = 21.3Ω
(Figures 15, 20, 21)
Input Capacitance
Output Capacitance
Reverse Transfer Characterisics
C_ISS
C_OSS
C_RSS
V_DS = 25V, V_GS = 0V, f = 1MHz,
(Figure 14)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R_θJC
R_θJA
MIN TYP MAX
80
-
-
1
-
2.5
-
-
25
-
-
250
-
-
±100
-
-
0.800
-
-
75
-
15
-
-
45
-
-
22
-
-
15
-
-
-
45
-
6.8
8.5
-
3.8
4.8
-
0.18 0.24
-
-
125
-
-
55
-
-
15
-
-
5.0
-
-
100
Source to Drain Diode Ratings and Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Source to Drain Diode Voltage (Note 2)
V_SD I_SD = 3A
-
-
1.25
Reverse Recovery Time
t_rr
I_SD = 3A, dI_SD/dt = 100A/µs
-
-
85
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. Refer to Intersil Application Notes AN9321 and AN9322.
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o_C/W
o_C/W
UNITS
V
ns
6-27