ISL6610 Datasheet, PDF (4/11 Pages) Intersil Corporation – Dual Synchronous Rectified MOSFET Drivers

ISL6610, ISL6610A
Absolute Maximum Ratings
Supply Voltage (PVCC, VCC) . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V_EN, V_PWM) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V_BOOT-GND). . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT To PHASE Voltage (V_BOOT-PHASE) . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)
GND -8V (<20ns Pulse Width, 10μJ) to 30V (<100ns)
UGATE Voltage . . . . . . . . . . . . . . . . V_PHASE - 0.3V (DC) to V_BOOT
V_PHASE - 5V (<20ns Pulse Width, 10μJ) to V_BOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5μJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . .-40°C to +125°C
HBM ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Thermal Information
Thermal Resistance (Typical)
θ_JA(°C/W) θ_JC(°C/W)
SOIC Package (Note 1) . . . . . . . . . . . .
90
N/A
QFN Package (Notes 2 and 3). . . . . . .
46
8.5
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300°C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to +85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
+150°C max junction temperature is intended for short periods of time to prevent shortening the lifetime. Constantly operated at 150°C may shorten the life of the part.
NOTES:
1. θ_JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. θ_JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
3. θ_JC, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
Electrical Specifications These specifications apply for T_A = -40°C to +85°C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
SUPPLY CURRENT
Bias Supply Current
BOOTSTRAP DIODE
I_VCC+PVCC PWM pin floating, V_VCC = V_PVCC = 5V
F_PWM = 300kHz, V_VCC = V_PVCC = 5V
-
240
-
μA
-
1.6
-
mA
Forward Voltage
V_F
Forward bias current = 2mA
T_A = 0°C to +70°C
0.30 0.60 0.70
V
POWER-ON RESET
Forward bias current = 2mA
T_A = -40°C to +85°C
0.30 0.60 0.75
V
POR Rising
-
3.4
4.2
V
POR Falling
2.6
3.0
-
V
Hysteresis
-
400
-
mV
PWM INPUT
Sinking Impedance
R_{PWM_SNK}
-
4.6
-
kΩ
Source Impedance
R_{PWM_SRC}
-
4.9
-
kΩ
Tri-State Rising Threshold
V_VCC = V_PVCC = 5V (250mV Hysteresis)
1.00 1.20 1.40
V
Tri-State Falling Threshold
V_VCC = V_PVCC = 5V(300mV Hysteresis)
3.10 3.41 3.70
V
Tri-State Shutdown Holdoff Time
t_TSSHD
-
80
-
ns
SWITCHING TIME (Note 4, See Figure 1)
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
t_RU
t_RL
t_FU
t_FL
t_PDLU
t_PDLL
3nF Load
3nF Load
3nF Load
3nF Load
Outputs Unloaded
Outputs Unloaded
-
8.0
-
ns
-
8.0
-
ns
-
8.0
-
ns
-
4.0
-
ns
-
18
-
ns
-
25
-
ns
4
FN6395.0
November 22, 2006