ISL22429 Datasheet, PDF (4/13 Pages) Intersil Corporation – Low Noise, Low Power, SPI Bus, 128 Taps, Wiper Only

ISL22449
Operating Specifications Over the recommended operating conditions unless otherwise specified. Parameters with MIN and/or MAX
limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
SYMBOL
PARAMETER
TEST CONDITIONS
TYP
MIN (Note 3) MAX
UNIT
I_CC1
V_CC Supply Current (volatile
write/read)
V_CC = +3.6V, 10k DCP, f_SPI = 5MHz; (for SPI
active, read and write states)
2.5
mA
V_CC Supply Current (volatile
write/read)
V_CC = +3.6V, 50k DCP, f_SPI = 5MHz; (for SPI
active, read and write states)
0.65
mA
I_CC2
V_CC Supply Current ( non-volatile
write/read)
V_CC = +5.5V, 10k DCP, f_SPI = 5MHz; (for SPI
active, read and write states)
4.0
mA
V_CC Supply Current ( non-volatile
write/read)
V_CC = +5.5V, 50k DCP, f_SPI = 5MHz; (for SPI
active, read and write states)
3.0
mA
I_SB
V_CC Current (standby)
V_CC = +5.5V, 10k DCP, SPI interface in
standby state
2.4
mA
V_CC = +5.5V, 50k DCP, SPI interface in
standby state
525
µA
V_CC = +3.6V, 10k DCP, SPI interface in
standby state
1.6
mA
V_CC = +3.6V, 50k DCP, SPI interface in
standby state
350
µA
I_SD
V_CC Current (shutdown)
V_CC = +5.5V @ +85°C, SPI interface in
standby state
5
µA
V_CC = +5.5V@ +125°C, SPI interface in
standby state
6.5
µA
V_CC = +3.6V @ +85°C, SPI interface in
standby state
4
µA
V_CC = +3.6V @ +125°C, SPI interface in
standby state
5.5
µA
I_LkgDig Leakage current, at pins SHDN, SCK, Voltage at pin from GND to V_CC
-1
SDI, SDO and CS
1
µA
t_WRT DCP wiper response time
SCK falling edge of last bit of DCP data byte
1.5
µs
(Note 13)
to wiper new position
t_ShdnRec DCP recall time from shutdown mode From rising edge of SHDN signal to wiper
1.5
µs
(Note 13)
stored position and RH connection
SCK rising edge of last bit of ACR data byte
1.5
µs
to wiper stored position and RH connection
Vpor Power-on recall voltage
VccRamp Vcc ramp rate
Minimum V_CC at which memory recall occurs
2.0
0.2
2.6
V
V/ms
t_D
Power-up delay
V_CC above Vpor, to DCP Initial Value
Register recall completed, and SPI Interface
in standby state
3
ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T < +55°C
50
Years
t_WC
Non-volatile Write cycle time
(Note 11)
12
20
ms
SERIAL INTERFACE SPECIFICATIONS
V_IL
SHDN, SCK, SDI, and CS input buffer
LOW voltage
-0.3
0.3*V_CC
V
4
FN6333.3
July 17, 2009