ISL22419 Datasheet, PDF (4/13 Pages) Intersil Corporation – Low Noise, Low Power, SPI Bus, 128 Taps, Wiper Only

ISL22419
Operating Specifications Over the recommended operating conditions unless otherwise specified. Parameters with MIN and/or MAX
limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
SYMBOL
PARAMETER
TEST CONDITIONS
TYP
MIN
(Note 3) MAX
UNIT
I_CC1
V_CC Supply Current (volatile
write/read)
10k DCP, f_SPI = 5MHz; (for SPI active, read
and write states)
1
mA
V_CC Supply Current (volatile
write/read)
50k DCP, f_SPI = 5MHz; (for SPI active, read
and write states)
0.5
mA
I_CC2
V_CC Supply Current ( non-volatile
write/read)
10k DCP, f_SPI = 5MHz; (for SPI active, read
and write states)
3.2
mA
V_CC Supply Current ( non-volatile
write/read)
50k DCP, f_SPI = 5MHz; (for SPI active, read
and write states)
2.7
mA
I_SB
V_CC Current (standby)
V_CC = +5.5V, 10k DCP, SPI interface in
standby state
850
µA
V_CC = +5.5V, 50k DCP, SPI interface in
standby state
160
µA
V_CC = +3.6V, 10k DCP, SPI interface in
standby state
550
µA
V_CC = +3.6V, 50k DCP, SPI interface in
standby state
100
µA
I_SD
V_CC Current (shutdown)
V_CC = +5.5V @ +85°C, SPI interface in
standby state
3
µA
V_CC = +5.5V@ +125°C, SPI interface in
standby state
5
µA
V_CC = +3.6V @ +85°C, SPI interface in
standby state
2
µA
V_CC = +3.6V @ +125°C, SPI interface in
standby state
4
µA
I_LkgDig Leakage Current, at Pins SHDN, SCK, Voltage at pin from GND to V_CC
-1
SDI, SDO and CS
1
µA
t_WRT Wiper Response Time
Wiper Response Time after SPI write to WR
1.5
µs
(Note 11)
register
t_ShdnRec DCP Recall Time from Shutdown
(Note 11) Mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
µs
SCK rising edge of last bit of ACR data byte
1.5
µs
to wiper stored position and RH connection
Vpor Power-on Recall Voltage
V_CC Ramp V_CC Ramp Rate
t_D
Power-up Delay
Minimum V_CC at which memory recall occurs
2.0
0.2
V_CC above Vpor, to DCP Initial Value
Register recall completed, and SPI Interface
in standby state
2.6
V
V/ms
3
ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T ≤ +55°C
50
Years
t_WC
Non-volatile Write Cycle Time
(Note 9)
From rising edge of CS
12
20
ms
SERIAL INTERFACE SPECIFICATIONS
V_IL
SHDN, SCK, SDI, and CS Input Buffer
LOW Voltage
-0.3
0.3*V_CC
V
4
FN6311.1
September 8, 2009