IRFR9120 Datasheet, PDF (4/7 Pages) Intersil Corporation – 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs

IRFR9120, IRFU9120
Typical Performance Curves Unless Otherwise Specified (Continued)
E_AS = 210mJ
-14
CONDITIONS:
V_DD = -25V, I_AS = -5.6A,
-10
L = 10mH, STARTING T_J = 25^oC
STARTING T_J = 150^oC
STARTING T_J = 25^oC
If R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R) ln [(I_AS*R) / (1.3 RATED BV_DSS - V_DD) + 1]
-1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
-12
-10
T_C = 25^oC
-8
V_GS = -20V
-6
-4
-2
V_GS = -10V
V_GS = -8V
V_GS = -7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = -4.5V
V_GS = -6V
V_GS = -5V
0
0
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
-12
V_DD = -15V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-9
-6
-55^oC
25^oC
150^oC
-3
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
2.0
V_GS = V_DS, I_D = -250µA
1.5
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 ^{VGS = -10V, ID = -3.4A}
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
I_D = -250µA
1.5
1.0
1.0
0.5
0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
0.5
0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-86