IRFR9120 Datasheet, PDF (2/7 Pages) Intersil Corporation – 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs

IRFR9120, IRFU9120
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
IRFR9120, IRFU9120
-100
-100
±20
5.6
Refer to Peak Current Curve
Refer to UIS Curve
42
0.33
-55 to 150
300
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source on Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate to Drain Charge
Gate to Source Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS I_D = 250µA, V_GS = 0V
-100 -
-
V
V_GS(TH) V_GS = V_DS, I_D = 250µA
-2.0 - -4.0
V
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 150^oC -
-
-25
µA
- -250 µA
I_GSS V_GS = ±20V
-
- ±100 nA
r_DS(ON) I_D = 3.4A, V_GS = -10V, (Figure 9)
-
- 0.600 W
t_ON
t_d(ON)
t_r
V_DD = -50V, I_D = 6.8A, R_L = 7.1Ω,
V_GS = -10V, R_GS =18Ω
(Figures 13, 16, 17)
-
-
60
ns
- 9.6
-
ns
-
29
-
ns
t_d(OFF)
-
21
-
ns
t_f
-
25
-
ns
t_OFF
-
-
60
ns
Q_g
V_GS = 0V to -10V
Q_gd
Q_gs
V_DD = -80V,
I_D = 5.6A,
R_L = 14.3Ω
I_G(REF) = 1.0mA
-
-
18
nC
-
-
9
nC
-
-
3
nC
C_ISS V_DS = -25V, V_GS = 0V, f = 1MHz
- 485 -
pF
C_OSS
- 170 -
pF
C_RSS
R_θJC
R_θJA
-
45
-
pF
-
- 3.00 ^oC/W
-
-
100 ^oC/W
Source to Drain Diode Ratings and Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Source to Drain Diode Voltage (Note 2)
V_SD I_SD = -5.6A
-
-
-6.3
V
Reverse Recovery Time
t_rr
I_SD = -6.8A, dI_SD/dt = -100A/µs
-
130
150
ns
Reverse Recovery Charge
Q_RR
-
0.70
1.4
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
4-84