IRFR9120 Datasheet, PDF (1/7 Pages) Intersil Corporation – 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs

Data Sheet
IRFR9120, IRFU9120
July 1999 File Number 3987.4
5.6A, 100V, 0.600 Ohm, P-Channel Power
MOSFETs
These advanced power MOSFETs are designed, tested, and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. They are
P-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate-drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17501.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR9120
TO-252AA
IF9120
IRFU9120
TO-251AA
IF9120
NOTE: When ordering use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR91209A.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 5.6A, 100V
• r_DS(ON) = 0.600Ω
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
4-83
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999