IRF9530 Datasheet, PDF (4/7 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

IRF9530, RF1S9530SM
Typical Performance Curves Unless Otherwise Specified (Continued)
-100
10µs
100µs
-10
1ms
OPERATION IN THIS
AREA MAY BE
-1
LIMITED BY r_DS(ON)
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
-0.1
-1
-10
-100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
-1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-20
V_GS = -9V
V_GS = -10V
-16
PULSE DURATION = 80µs ^{VGS = -8V}
-12
DUTY CYCLE = 0.5% MAX
V_GS = -7V
-8
V_GS = -6V
-4
V_GS = -5V
V_GS = -4V
0
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
-10
-8 ^{VGS = -8V}
V_GS = -9V
V_GS = -10V
-6
-4
V_GS = -7V
V_GS = -6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = -5V
-2
V_GS = -4V
00
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
1.0
2µs PULSE TEST
0.8
V_GS = -10V
0.6
0.4
V_GS = - 20V
0.2
0
0
-10
-20
-30
-40
-50
I_D, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
-20
V_DS ≥ I _D(ON) x r_DS(ON)
PULSE DURATION = 80µs
-16 ^{DUTY CYCLE = 0.5% MAX}
-55^oC
-12
25^oC
-8
125^oC
-4
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.2
V_GS = -10V, I_D = -6.5A
PULSE DURATION = 80µs
1.8 ^{DUTY CYCLE = 0.5% MAX}
1.4
1.0
0.6
0.2
-40
0
40
80
120
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-12