IRF9530 Datasheet, PDF (1/7 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

Data Sheet
IRF9530, RF1S9530SM
July 1999 File Number 2221.4
12A, 100V, 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. The high input impedance allows these
types to be operated directly from integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9530
TO-220AB
IRF9530
RF1S9530SM
TO-263AB
RF1S9530
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9530SM9A.
Features
• 12A, 100V
• r_DS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263A
GATE
SOURCE
DRAIN
(FLANGE)
4-9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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