IRF9530 Datasheet, PDF (2/7 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

IRF9530, RF1S9530SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
IRF9530,
RF1S9530SM
-100
-100
-12
-7.5
-48
±20
75
0.6
500
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to T_J = 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
BV_DSS
V_GS(TH)
I_DSS
I_D(ON)
I_GSS
r_DS(ON)
g_fs
I_D = -250µA, V_GS = 0V, (Figure 10)
V_GS = V_DS, I_D = -250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C= 125^oC
V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = -10V,
(Figure 7)
V_GS = ±20V
I_D = -6.5A, V_GS = -10V, (Figures 8, 9)
V_DS > I_D(ON) x r_DS(ON) Max, I_D = -6.5A
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain (“Miller”) Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
t_d(ON)
t_r
t_d(off)
t_f
Q_g(TOT)
Q_gs
Q_gd
C_ISS
C_OSS
C_RSS
L_D
L_S
V_DD = 50V, I_D ≈ -12A, R_G = 50Ω, V_GS = 10V
R_L = 4.2Ω, (Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
V_GS = -10V, I_D = -12A, V_DSS= 0.8 x Rated BV_DSS,
(Figure 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
V_DS = -25V, V_GS = 0V, f = 1MHz, (Figure 11)
Measured From the
Contact Screw On Tab To
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L_D
G
L_S
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R_θJC
R_θJA
Typical Socket Mount
MIN
-100
-2
-
-
-12
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.250
3.8
30
70
70
70
25
13
12
500
300
100
3.5
4.5
7.5
-
-
MAX
-
-4
-25
-250
-
±100
0.300
-
60
140
140
140
45
-
-
-
-
-
-
-
-
1.67
62.5
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
nH
o_C/W
o_C/W
4-10