CD4051BMS Datasheet, PDF (4/12 Pages) Intersil Corporation – CMOS Analog Multiplexers/Demultiplexers

Specifications CD4051BMS, CD4052BMS, CD4053BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55^oC to +125^oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65^oC to +150^oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265^oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θ_ja
Ceramic DIP and FRIT Package . . . . . 80^oC/W
θ_jc
20^oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70^oC/W
20^oC/W
Maximum Package Power Dissipation (PD) at +125^oC
For TA = -55^oC to +100^oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100^oC to +125^oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/^oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Input Leakage Current
Input Leakage Current
On-State Resistance
RL = 10K Returned to
VDD - VSS/2
N Threshold Voltage
P Threshold Voltage
Functional
(Note 4)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Off Channel Leakage
Any Channel OFF
Or
All Channels Off
(Common Out/In)
SYMBOL
CONDITIONS (NOTE 1)
IDD VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
IIL VIN = VDD or GND VDD = 20
VDD = 18V
IIH VIN = VDD or GND VDD = 20
RON VDD = 5V
VIS = VSS to VDD
VDD = 18V
VDD = 10V
VIS = VSS to VDD
VDD = 15V
VIS = VSS to VDD
VNTH
VPTH
F
VIL
VIH
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V = VIS thru 1k,
VEE = VSS
RL = 1k to VSS, |IIS| < 2µA
OFF Channels
GROUP A
LIMITS
SUBGROUPS TEMPERATURE MIN MAX UNITS
1
+25^oC
-
10 µA
2
+125^oC
- 1000 µA
3
-55^oC
-
10 µA
1
+25^oC
-100
-
nA
2
+125^oC
-1000 -
nA
3
-55^oC
-100
-
nA
1
+25^oC
-
100 nA
2
+125^oC
- 1000 nA
3
-55^oC
-
100 nA
1
+25^oC
- 1050 Ω
2
+125^oC
- 1300 Ω
3
-55^oC
-
800 Ω
1
+25^oC
-
400 Ω
2
+125^oC
-
550 Ω
3
-55^oC
-
310 Ω
1
+25^oC
-
240 Ω
2
+125^oC
-
320 Ω
3
-55^oC
-
220 Ω
1
+25^oC
-2.8 -0.7 V
1
+25^oC
0.7 2.8
V
7
+25^oC
VOH > VOL < V
7
+25^oC
VDD/2 VDD/2
8A
+125^oC
8B
-55^oC
1, 2, 3
+25^oC, +125^oC, -55^oC -
1.5
V
1, 2, 3
+25^oC, +125^oC, -55^oC 3.5
-
V
VIL VDD = 15V = VIS thru 1K
VEE = VSS
VIH ^{RL = 1K to VSS, |ISS|, <2µA}
On All OFF Channels
1, 2, 3
+25^oC, +125^oC, -55^oC -
4
V
1, 2, 3
+25^oC, +125^oC, -55^oC 11
-
V
IOZL VIN = VDD or GND VDD = 20V
1
VOUT = 0V
2
VDD = 18V
3
IOZH VIN = VDD or GND VDD = 20V
1
VOUT = VDD
2
VDD = 18V
3
+25^oC
+125^oC
-55^oC
+25^oC
+125^oC
-55^oC
-0.1
-
µA
-1.0
-
µA
-0.1
-
µA
-
0.1 µA
-
1.0 µA
-
0.1 µA
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
4. VDD = 2.8V/3.0V, RL = 200k to VDD
VDD = 20V/18V, RL = 10k to VDD
7-940