RFP4N05L Datasheet, PDF (3/5 Pages) Intersil Corporation – 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

RFP4N05L, RFP4N06L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
T_J
T_C
=
=
MAX RATED
25^oC
1
OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
0.10
0.01
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
12 ^{PULSE DURATION = 80µs}
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
10
8
V_GS = 10V
V_GS = 7.5V
6
V_GS = 5V
4
V_GS = 4.5V
V_GS = 4V
V_GS = 3.5V
2
V_GS = 3V
V_GS = 2.5V
0
V_GS = 2V
0
1
2
3
4
5
6
7
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
5 V_DS = 10V
4
-40^oC ^{25oC 125oC}
3
2
125^oC
1
-40^oC
0
1
2
3
4
5
6
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
1.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.2 _{VGS = 5V}
1
125^oC
0.8
25^oC
0.6
-40^oC
0.4
0.2
0
0
2
4
6
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
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