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| RFP4N05L Datasheet, PDF (2/5 Pages) Intersil Corporation – 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs | |||
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RFP4N05L, RFP4N06L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage RGS = 20K⦠(Note 1) . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derating Above TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP4N05L
50
50
±10
4
10
25
0.2
-55 to 150
300
260
RFP4N06L
60
60
±10
4
10
25
0.2
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFP4N05L
BVDSS ID = 250µA, VGS = 0V
RFP4N06L
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±10V, VDS = 0
ID = 4A, VGS = 5V
ID = 4A, VGS = 5V, (Figures 6, 7)
ID â 4A, VDD = 30V, RG = 6.25â¦,
RL = 7.5â¦, VGS = 5V
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = 1A
Reverse Recovery Time
trr
ISD = 2A, dlSD/dt = 100A/µs
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
6-275
MIN
TYP MAX UNITS
50
-
-
V
60
-
-
V
1
-
2
V
-
-
25
µA
-
-
250
µA
-
-
±100
nA
-
-
3.2
V
-
-
0.800
â¦
-
10
20
ns
-
65
130
ns
-
20
40
ns
-
30
60
ns
-
-
225
pF
-
-
100
pF
-
-
40
pF
-
-
5
oC/W
MIN TYP MAX UNITS
-
-
1.4
V
-
150
-
ns
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