RFP4N05L Datasheet, PDF (1/5 Pages) Intersil Corporation – 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

Data Sheet
RFP4N05L, RFP4N06L
July 1999 File Number 2876.2
4A, 50V and 60V, 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement
mode silicon gate power field effect transistors designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09520.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N05L
TO-220AB
RFP4N05L
RFP4N06L
TO-220AB
RFP4N06L
NOTE: When ordering, include the entire part number.
Features
• 4A, 50V and 60V
• r_DS(ON) = 0.800Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
JEDEL TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-274
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999