RFP2N20 Datasheet, PDF (3/5 Pages) Intersil Corporation – 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET

RFP2N20
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1
0.10
OPERATION IN THIS AREA
MAY BE LIMITED BY r_DS(ON)
T_J = MAX RATED
SINGLE PULSE
T_C = 25^oC
0.01
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 20V
2.5 _{TC = 25}o_C
V_GS = 10V
2
V_GS = 8V
1.5
V_GS = 7V
1
0.5
0
0
V_GS = 6V
V_GS = 5V
V_GS = 4V
1
2
3
4
5
6
7
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5 _{VDS = 15V}
2
-40^oC
25^oC
125^oC
1.5
1
25^oC
0.5
125^oC
-40^oC
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
6 ^{PULSE DURATION = 80µs}
DUTY CYCLE = 0.5% MAX
V_GS = 10V
5
125^oC
4
3
25^oC
2
-40^oC
1
0
0
0.5
1
1.5
2
2.5
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
4-520