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| RFP2N20 Datasheet, PDF (1/5 Pages) Intersil Corporation – 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET | |||
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Data Sheet
RFP2N20
July 1999 File Number 2881.2
2A, 200V, 3.500 Ohm, N-Channel Power
MOSFET
These are N-Channel enhancement mode silicon gate
power ï¬eld effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09289.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N20
TO-220AB
RFP2N20
NOTE: When ordering, include the entire part number.
Features
⢠2A, 200V
⢠rDS(ON) = 3.500â¦
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
4-518
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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