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| RFP2N20 Datasheet, PDF (2/5 Pages) Intersil Corporation – 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET | |||
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RFP2N20
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
RFP2N20
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
200
V
Drain to Gate Voltage (RGS = 20kâ¦) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
2
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
5
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
25
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.2
W/ oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
ID = 250µA, VGS = 0
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS, TC = 125oC
VGS = ±20V, VDS = 0
ID = 2A, VGS = 10V, (Figures 6, 7)
ID = 2A, VGS = 10V
ID â 1A, VDD = 100V, RG = 50â¦
VGS = 10V, RL = 96.5â¦
(Figure 10)
VGS = 0V, VDS = 25V
f = 1MHz, (Figure 9)
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Diode Reverse Recovery Time
trr
ISD = 2A, dlSD/dt = 50A/µs
NOTES:
2. Pulsed test: width ⤠300µs duty cycle ⤠2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
200
-
-
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
±100 nA
-
-
3.500
â¦
-
-
7.0
V
-
15
25
ns
-
20
30
ns
-
25
40
ns
-
15
25
ns
-
-
200
pF
-
-
60
pF
-
-
25
pF
-
-
5
oC/W
MIN TYP MAX UNITS
-
-
1.4
V
-
200
-
ns
4-519
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