RFP12P08 Datasheet, PDF (3/5 Pages) Intersil Corporation – 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

Typical Performance Curves
RFP12P08, RFP12P10
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
I_D MAX CONTINUOUS
10
DC
T_C = 25^oC
T_J = MAX RATED
1
RFP12P08
0.1
1
RFP12P10
10
100
V_DS, DRAIN TO SOURCE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
30
V_GS = -20V
V_GS = -10V V_GS = -9V
V_GS = -8V
V_GS = -7V
20
V_GS = -6V
10
V_GS = -5V
V_GS = -3V V_GS = -4V
0
0
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
20
V_DS = -10V
PULSE DURATION = 80µs
16 DUTY CYCLE = 0.5% MAX
12
-40^oC
25^oC
125^oC
8
4
125^oC
-40^oC
0
0
-2
-3
-4
-5
-6
-7
-8
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
0.4
V_GS = -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.3
0.2
0.1
125^oC
25^oC
-40^oC
0
0 2 4 6 8 10 12 14 16 18 20
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-163