RFP12P08 Datasheet, PDF (1/5 Pages) Intersil Corporation – 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

Data Sheet
RFP12P08, RFP12P10
June 1999 File Number 1495.2
12A, 80V and 100V, 0.300 Ohm, P-Channel
Power MOSFETs
The RFP12P08, and RFP12P10 are P-Channel
enhancement mode silicon gate power field effect transistors
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12P08
TO-220AB
RFP12P08
RFP12P10
TO-220AB
RFP12P10
NOTE: When ordering, include the entire part number.
Features
• 12A, 80V and 100V
• r_DS(ON) = 0.300Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(TAB)
TO-220AB
SOURCE
DRAIN
GATE
4-161
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.