RFP12P08 Datasheet, PDF (2/5 Pages) Intersil Corporation – 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs

RFP12P08, RFP12P10
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFP12P08
-80
-80
RFP12P10
-100
-100
12
30
±20
75
0.6
-55 to 150
12
30
±20
75
0.6
-55 to 150
300
300
260
260
UNITS
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFP12P08
BV_DSS I_D = 250µA, V_GS = 0
RFP12P10
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
V_GS(TH)
I_DSS
I_GSS
V_DS(ON)
r_DS(ON)
t_d(ON)
t_r
t_d(OFF)
t_f
C_ISS
C_OSS
C_RSS
R_θJC
V_GS = V_DS, I_D = 250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V,
T_C = 125^oC
V_GS = ±20V, V_DS = 0
I_D = 12A, V_GS = -10V
I_D = 12A, V_GS = -10V, (Figures 6, 7)
I_D ≈ 12A, V_DD = 50V,
R_G = 50Ω, R_L = 4.1Ω, V_GS = -10V
(Figure 10)
V_GS = 0V, V_DS = -25V, f = 1MHz
(Figure 9)
RFP12P08, RFP12P10
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = -12A
Diode Reverse Recovery Time
t_rr
I_SD = -12A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width = ≤ 300µs Max, Duty Cycle ≤ 2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN
-80
-100
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP MAX UNITS
-
-
V
-
-
V
-
-4
V
-
1
µA
-
25
µA
-
±100
nA
-
-3.6
V
-
0.300
Ω
18
60
ns
90
175
ns
144
275
ns
94
175
ns
-
1500
pF
-
700
pF
-
300
pF
-
1.67
o_C/W
TYP MAX UNITS
-
1.4
V
200
-
ns
4-162