RFP12N10L Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

RFP12N10L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
100 _{OPERATION IN THIS}
REGION IS LIMITED
BY r_DS(ON)
T_C = 25^oC
TJ = MAX RATED
I_D(MAX) CONTINUOUS
10
DC OPERATION
1
60W
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 2. FORWARD BIAS OPERATING AREA
40
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5%
T_C = 25^oC
30
20
VGS ^{= 10V}
5V
4V
10
3V
2V
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. SATURATION CHARACTERISTICS
20
V_DS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5%
15
-40^oC
25^oC
10
125^oC
5
125^oC
-40^oC
0
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 4. TRANSFER CHARACTERISTICS
0.3
125^oC
0.2
25^oC
-40^oC
0.1
V_GS = 5V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5%
0
0
5
10
15
20
25
30
I_D, DRAIN CURRENT (A)
FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
2.0
V_GS = 5V, I_D = 12A
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5%
1.5
1.0
0.5
0
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
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