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| RFP12N10L Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET | |||
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RFP12N10L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 1Mâ¦) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP12N10L
100
100
12
30
10
60
0.48
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance Junction to Case
BVDSS ID = 250mA, VGS = 0V
100
-
-
V
VGS(TH) VGS = VDS, ID = 250mA (Figure 7)
1
-
2
V
IDSS
VDS = 65V, VDS = 80V
-
VDS = 65V, VDS = 80V TC = 125oC
-
-
1
µA
-
50
µA
IGSS
VGS = 10V, VDS = 0V
-
-
100
µA
rDS(ON) ID = 12A, VGS = 5V (Figures 5, 6)
-
-
0.2
â¦
CISS
COSS
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 8)
-
-
900
pF
-
-
325
pF
CRSS
-
-
170
pF
td(ON)
tr
ID = 6A, VDD = 50V, RG = 6.25â¦,
VGS = 5V
(Figures 9, 10, 11)
-
15
50
ns
-
70 150
ns
td(OFF)
-
100 130
ns
tf
-
80 150
ns
RθJC
RFP12N10L
2.083 oC/W
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 6A
Diode Reverse Recovery Time
trr
ISD = 4A, dISD/dt = 50A/µs
NOTES:
2. Pulsed: pulse duration = 80µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
150
-
ns
6-225
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