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RFP12N10L Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET | |||
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Data Sheet
RFP12N10L
July 1999 File Number 1512.3
12A, 100V, 0.200 Ohm, Logic Level,
N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate
power ï¬eld effect transistors speciï¬cally designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09526.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12N10L
TO-220AB
F12N10L
NOTE: When ordering, include the entire part number.
Features
⢠12A, 100V
⢠rDS(ON) = 0.200â¦
⢠Design Optimized for 5V Gate Drives
⢠Can be Driven Directly from QMOS, NMOS,
TTL Circuits
⢠Compatible with Automotive Drive Requirements
⢠SOA is Power-Dissipation Limited
⢠Nanosecond Switching Speeds
⢠Linear Transfer Characteristics
⢠High Input Impedance
⢠Majority Carrier Device
⢠Related Literature
- TB334 âGuidelines for Soldering Surface Mount
Components to PC Boards
Symbol
D
Packaging
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
6-224
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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