RFP10P15 Datasheet, PDF (3/5 Pages) Intersil Corporation – -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET

RFP10P15
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
25
RFM10P12, RFM10P15
RFP10P12, RFP10P15
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
I_D MAX CONTINUOUS
10
DC
T_J
T_C
=
=
MAX RATED
25^oC
1
RFM10P12, RFP10P12
RFM10P15, RFP10P15
0.1
-1
-10
-100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
-1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
32
PULSE DURATION = 80µs
28 ^{TC = 25oC}
24
V_GS = -10V
V_GS = -20V
20
16
V_GS = -8V
12
8
V_GS = -7V
4
V_GS = -5V
V_GS = -6V
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
14
V_DS = -10V
PULSE DURATION = 80µs
12
10
25^oC
-40^oC
8
125^oC
6
4
125^oC
2
-40^oC
0
0
-1
-2
-3
-4
-5
-6
-7
-8
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
0.8
V_GS = -10V
0.7 PULSE DURATION = 80µs
0.6
125^oC
0.5
0.4
25^oC
0.3
0.2
-40^oC
0.1
0
0 2 4 6 8 10 12 14 16 18 20
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
3