RFP10P15 Datasheet, PDF (2/5 Pages) Intersil Corporation – -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET

RFP10P15
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20KΩ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFP10P15
-150
-150
10
30
±20
75
0.6
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
BV_DSS
V_GS(TH)
I_DSS
I_D = 250µA, V_GS = 0
V_GS = V_DS, I_D = 250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V,
TC = 125^oC
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
I_GSS
V_DS(ON)
r_DS(ON)
t_d(ON)
t_r
t_d(OFF)
t_f
C_ISS
C_OSS
C_RSS
R_θJC
V_GS = ±20V, V_DS = 0
I_D = 10A, V_GS = -10V
I_D = 10A, V_GS = -10V, (Figures 6, 7)
I_D ≈ 10A, V_DS = -75V, R_G = 50Ω
R_L = 7.5Ω, V_GS = -10V
(Figures 10, 11, 12)
V_GS = 0V, V_DS = -25V
f = 1MHz
(Figure 9)
RFM10P12, RFM10P15
RFP10P12, RFP10P15
MIN TYP MAX UNITS
-150
-
-
V
-2
-
-4
V
-
-
1
µA
-
-
25
µA
-
-
±100 nA
-
-
-5.0
V
-
-
0.500
Ω
-
24
50
ns
-
74
150
ns
-
138 225
ns
-
61
100
ns
-
-
1700
pF
-
-
600
pF
-
-
350
pF
-
-
1.25 ^oC/W
1.67 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = -10A
-
-
1.4
V
Reverse Recovery Time
t_rr
I_SD = -10A, dl_SD/dt = 100A/µs
-
210
-
ns
NOTES:
2. Pulsed: Pulse Duration = 300µs Max, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2