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RFP10P15 Datasheet, PDF (1/5 Pages) Intersil Corporation – -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET
Data Sheet
RFP10P15
October 1999 File Number 1595.2
-10A, -150V, 0.500 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9404.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP10P15
TO-220AB
RFP10P15
NOTE: When ordering, include the entire part number.
Features
• -10A, -150V
• rDS(ON) = 0.500Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
407-727-9207 | Copyright © Intersil Corporation 1999