RFM12N18 Datasheet, PDF (3/4 Pages) Intersil Corporation – 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

RFM12N18, RFM12N20, RFP12N18, RFP12N20
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100 _{TC = 25oC}
I_D (MAX)
CONTINUOUS
10
OPERATION IN
THIS AREA MAY BE
1 ^{LIMITED BY rDS(ON)}
0.1
1
V_DSS (MAX) 180V
RFM12N18, RFP12N18
V_DSS (MAX) 200V
RFM12N20, RFP12N20
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
30
PULSE DURATION = 80µs V_GS = 10V
DUTY CYCLE ≤ 2%
25 CASE TEMPERATURE
T_C = 25^oC
V_GS = 20V
20
V_GS = 8V
V_GS = 7V
V_GS = 6V
15
V_GS = 5V
10
5
V_GS = 4V
0
0
1
2
3
4
5
6
7
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
40
V_DS = 10V
35 ^{PULSE DURATION = 80µs}
DUTY CYCLE ≤ 2%
30
25
20
-40^oC
25^oC
125^oC
15
10
125^oC
5
-40^oC
0
0 1 2 3 4 5 6 7 8 9 10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
0.6
V_GS = 10V
PULSE DURATION = 80µs
0.5 _{DUTY CYCLE ≤ 2%}
0.4
0.3
0.2
0.1
125^oC
25^oC
-40^oC
0
0
5
10
15
20
25
30
35
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
5-3