RFM12N18 Datasheet, PDF (2/4 Pages) Intersil Corporation – 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

RFM12N18, RFM12N20, RFP12N18, RFP12N20
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFM12N18 RFM12N20 RFP12N18 RFP12N20 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 1mΩ) (Note 1). . . . . . . . . . . . . . . V_DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T_pkg
180
180
12
30
±20
100
0.8
-55 to 150
300
260
200
200
12
30
±20
100
0.8
-55 to 150
300
260
180
180
12
30
±20
75
0.6
-55 to 150
300
260
200
200
12
30
±20
75
0.6
-55 to 150
300
260
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFM12N18, RFP12N18
BV_DSS I_D = 250µA, V_GS = 0V
RFM12N20, RFP12N20
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V_GS(TH) V_GS = V_DS, I_D = 250µA, (Figure 8)
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
VT_{CDS==1205.8oCx} Rated BV_DSS, V_GS = 0V,
I_GSS V_GS = ±20V, V_DS = 0V
r_DS(ON) I_D = 12A, V_GS = 10V, (Figures 6, 7)
V_DS(ON) I_D = 12A, V_GS = 10V
t_d(ON)
t_r
t_d(OFF)
V_DD = 100V, I_D ≈ 6A, R_G = 50Ω,
R_L = 16.5Ω, V_GS = 10V,
(Figures 10, 11, 12)
t_f
C_ISS
C_OSS
V_DS = 25V, V_GS = 0V, f = 1MHz,
(Figure 9)
C_RSS
R_θJC RFM12N18, RFM12N20
RFP12N18, RFP12N20
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 6A
Reverse Recovery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTE:
2. Pulsed: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
180
-
200
-
2
-
-
-
-
-
-
V
-
V
4
V
1
µA
25 µA
-
- ±100 nA
-
- 0.250 Ω
-
-
3.0
V
-
35 50 ns
-
130 200 ns
-
120 180 ns
-
105 160 ns
-
- 1700 pF
-
-
600 pF
-
-
300 pF
-
-
1.25 ^oC/W
-
-
1.67 ^oC/W
MIN TYP MAX UNITS
-
-
1.4
V
-
325
-
ns
5-2