RFM12N18 Datasheet, PDF (1/4 Pages) Intersil Corporation – 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

Semiconductor
September 1998
RFM12N18, RFM12N20,
RFP12N18, RFP12N20
12A, 180V and 200V, 0.250 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM12
N18,
RFM12
N20,
RFP12N
18,
RFP12N
20)
/Subject
(12A,
180V
and
200V,
0.250
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
Features
• 12A, 180V and 200V
• r_DS(ON) = 0.250Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM12N18
TO-204AA
RFM12N18
RFM12N20
TO-204AA
RFM12N20
RFP12N18
TO-220AB
RFP12N18
RFP12N20
TO-220AB
RFP12N20
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA09293.
Symbol
D
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1461.2