RFM12N08 Datasheet, PDF (3/5 Pages) Intersil Corporation – 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

RFM12N08, RFM12N10, RFP12N08, RFP12N10
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
100
T_C = 25^oC
I_D (MAX)
CONTINUOUS
10
OPERATION IN
THIS AREA MAY BE
DC
OPERATION
LIMITED BY r_DS(ON)
1
V_DSS (MAX) 80V
RFM12N08, RFP12N08
V_DSS (MAX) 100V
RFM12N10, RFP12N10
0
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
16
V_DS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
12
T_C = -40^oC
T_C = 25^oC
T_C = 125^oC
8
T_C = 125^oC
4
T_C = 25^oC
0
T_C = -40^oC
2
4
6
8
10
12
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
14
12
RFM12N08, RFM12N10
10
RFP12N08, RFP12N10
8
6
4
2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
16
V_GS = 20V
12
8
V_GS = 10V
V_GS = 9V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
T_C = 25^oC
V_GS = 8V
V_GS = 7V
4
V_GS = 6V
V_GS = 5V
0
0
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
0.8
V_GS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
0.6
0.4
0.2
0
0
T_C = 125^oC
T_C = 25^oC
T_C = -40^oC
4
8
12
16
20
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
3